Si7405DN

The SI7405DN is designed as P-channel 12-V (D-S) MOSFET with typical applications of load switch, power switch and PA switch. Its Vds would be -12V and its Id would be -13A for Rds(on) is 0.016 at Vgs=-4.5A and it would be -11A for Rds(on) is 0.022 at Vgs=-2.5A and it would be -9.8A for Rds(on) is 0.028 at Vgs=-1.8A.

MEXY has two features. The first one is trenchFET power MOSFETS would be 1.8V rated. The second one is new powerPAK package which means low thermal resistance and low 1.07mm profile. That are all the main features.

Some absolute maximum ratings of MEXY have been concluded into several points as follow. Its drain to source voltage would be -12V. Its gate to source voltage would be +/-8V. Its continuous drain current would be -13A for 10secs and -8.3A for steady state at 25°C and it would be -9.4A for 10secs and -6.0A for 85°C. Its pulsed drain current would be -30A. Its continuous source current (diode conduction) would be -3.2A for 10secs and would be -1.3A for steady state. Its maximum power dissipation would be 3.8W for 10secs and would be 1.5W for steady state at 25°C and would be 2.0W for 10secs and 0.8W for steaby state at 85°C. Its operating junction and storage temperature range would be from -55°C to 150°C. Its thermal resistance maximum junction to ambient would be typ 26°C/W and max 33°C/W for 10secs and it would be typ 65°C/W and max 81°C/W for steaby state. Its thermal resistance maximum junction to case would be typ 1.9°C/W and max 2.4°C/W for steady state.

Also some electrical specifications about MEXY. Its gate threshold voltage would be min -0.45V. Its gate-body leakage would be max +/-100nA. Its zero gate voltage drain current would be max -1uA and it woud be -5uA at 85°C. Its on-state drain current would be min -30A. And so on. If you have any question or suggestion or want to know more information of MEXY please contact us for details. Thank you!