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Si7456DP

Features: · TrenchFET® Power MOSFETS· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· PWM Optimized for Fast Switching· 100% Rg TestedApplication· Primary Side Switch for High Density DC/DC· Telecom/Server 48-V, Full-/Half-Bridge DC/DC· Industrial and 42-V AutomotiveS...

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Si7456DP: Features: · TrenchFET® Power MOSFETS· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· PWM Optimized for Fast Switching· 100% Rg TestedApplication· Primary Side Switch f...

Si7456DP Data Sheet

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Part Number:
Si7456DP
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFETS
· New Low Thermal Resistance PowerPAK®
Package with Low 1.07-mm Profile
· PWM Optimized for Fast Switching
· 100% Rg Tested




Application

· Primary Side Switch for High Density DC/DC
· Telecom/Server 48-V, Full-/Half-Bridge DC/DC
· Industrial and 42-V Automotive




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 9.3 5.7 A
TA = 70 6.7 4.1
Pulsed Drain Current IDM 40
Single Avalanche Current L = 0.1 mH IAS 30
Single Avalanche Energy (Duty Cycle1%) EAS 45 mJ
Continuous Source Current (Diode Conduction)a IS 4.3 1.6
Maximum Power Dissipationa TA = 25 PD 5.2 1.9 W
TA = 70 2.7 1.0
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

Si7456DP: N-Channel 100-V (D-S) MOSFET




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