Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm ProfileApplication· Battery Switch for Portable DevicesSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 ...
Si7485DP: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm ProfileApplication· Battery Switch for Portable DevicesSpecifications Parameter Symbol...
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| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | -20 | V | ||
| Gate-Source Voltage | VGS | ±8 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -20 | -12.5 | A |
| TA = 70 | -16.5 | -9.5 | |||
| Pulsed Drain Current | IDM | -50 | |||
| Continuous Source Current (Diode Conduction)a | IS | -4.5 | -1.6 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 5 | 1.8 | W |
| TA = 70 | 3.2 | 1.1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | /W | ||