MOSFET 20V 35A 52.1W 8.7mohm @ 10V
Si7613DN-T1-GE3: MOSFET 20V 35A 52.1W 8.7mohm @ 10V
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 16 V | Continuous Drain Current : | 17 A | ||
| Resistance Drain-Source RDS (on) : | 0.0087 Ohms | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | PowerPAK 1212-8 | Packaging : | Reel |