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Si7820DN

Features: · PWM-Optimized TrenchFET® Power MOSFET· 100% Rg Tested· Avalanche TestedApplication· Primary Side Switch− Telecom Power Supplies− Distributed Power Architectures− Miniature Power ModulesSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Sou...

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SeekIC No. : 004490760 Detail

Si7820DN: Features: · PWM-Optimized TrenchFET® Power MOSFET· 100% Rg Tested· Avalanche TestedApplication· Primary Side Switch− Telecom Power Supplies− Distributed Power Architectures− Mi...

Si7820DN Data Sheet

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Part Number:
Si7820DN
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· PWM-Optimized TrenchFET® Power MOSFET
· 100% Rg Tested
· Avalanche Tested




Application

· Primary Side Switch
− Telecom Power Supplies
− Distributed Power Architectures
− Miniature Power Modules




Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 2.6 1.7 A
TA = 70 2.1 1.3
Pulsed Drain Current IDM 10
Continuous Source Current (Diode Conduction)a IS 3.2 1.3
Single Avalanche Current L = 0.1 mH IAS 3.5
Single Avalanche Energy EAS 0.6 mJ
Maximum Power Dissipationa TA = 25 PD 3.8 1.5 W
TA = 70 2.0 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150





Description

N-Channel 200-V (D-S) MOSFET
Si7820DN



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