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Si7846DP

Features: · TrenchFET® Power MOSFETS· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· PWM Optimized for Fast Switching· 100% Rg TestedApplication·Primary Side Switch for High Density DC/DC· Telecom/Server 48-V DC/DC· Industrial and 42-V AutomotiveSpecifications P...

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SeekIC No. : 004490764 Detail

Si7846DP: Features: · TrenchFET® Power MOSFETS· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm Profile· PWM Optimized for Fast Switching· 100% Rg TestedApplication·Primary Side Switch fo...

Si7846DP Data Sheet

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Part Number:
Si7846DP
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchFET® Power MOSFETS
· New Low Thermal Resistance PowerPAK®
Package with Low 1.07-mm Profile
· PWM Optimized for Fast Switching
· 100% Rg Tested


Application

·Primary Side Switch for High Density DC/DC
· Telecom/Server 48-V DC/DC
· Industrial and 42-V Automotive


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 6.7 4.0 A
TA = 70 5.4 3.3
Pulsed Drain Current IDM 50
Single Avalanche Current L = 0.1 mH IAS 25
Continuous Source Current (Diode Conduction)a IS 4.3 1.6
Maximum Power Dissipationa TA = 25 PD 5.2 1.9 W
TA = 70 3.3 1.2
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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