Features: TrenchFET® Power MOSFETPWM OptimizedNew Low Thermal Resistance PowerPAK TMPackage with Low 1.07-mm ProfileApplicationDC/DC Converters Low-Side MOSFET in Synchronous Buck in DesktopsSecondary Synchronous RectifierSpecifications Parameter Symbol 5 secs Steady State Un...
Si7880DP: Features: TrenchFET® Power MOSFETPWM OptimizedNew Low Thermal Resistance PowerPAK TMPackage with Low 1.07-mm ProfileApplicationDC/DC Converters Low-Side MOSFET in Synchronous Buck in DesktopsSe...
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| Parameter |
Symbol |
5 secs |
Steady State |
Unit | |
| Drain-Source Voltage |
VDS |
30 |
V | ||
| Gate-Source Voltage |
VGS |
±20 | |||
| Continuous Drain Current(TJ= 150 )a |
TA= 25 |
ID
|
29 |
18 |
A |
| TA= 70 |
25 |
14 | |||
| Pulsed Drain Current (10s Pulse Width) |
IDM |
20 | |||
| Continuous Source Current (Diode Conduction)a |
IS |
4.5 |
1.6 | ||
| Maximum Power Dissipationa | TA= 25 |
PD |
5.4 |
1.9 |
W |
| TA= 70 |
3.4 |
1.2 | |||
| Operating Junction and Storage Temperature Range |
TJ, Tstg |
−55 to 150 |
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