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Si7888DP

Features: ` TrenchFET® Power MOSFET` New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile` Optimized for High-Side Synchronous Rectifier Operation` 100% Rg TestedApplication· DC/DC ConvertersSpecifications Parameter Symbol 10 secs Steady State Unit Drain-Sour...

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SeekIC No. : 004490789 Detail

Si7888DP: Features: ` TrenchFET® Power MOSFET` New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile` Optimized for High-Side Synchronous Rectifier Operation` 100% Rg TestedApplicati...

Si7888DP Data Sheet

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Part Number:
Si7888DP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` TrenchFET® Power MOSFET
` New Low Thermal Resistance PowerPAK®
    Package with Low 1.07-mm Profile
` Optimized for "High-Side" Synchronous
    Rectifier Operation
` 100% Rg Tested


Application

· DC/DC Converters


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 15.7 9.4 A
TA = 70 12.5 7.5
Pulsed Drain Current IDM ±50
Continuous Source Current (Diode Conduction)a IS 4.1 -1.5
Single Avalanche Current L = 0.1 mH IAS 20
Single Avalanche Energy EAS 20 mJ
Maximum Power Dissipationa TA = 25 PD 5.0 1.8 W
TA = 70 3.2 1.1
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 /W



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