Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package· Dual MOSFET for Space Savings· 100% Rg TestedApplication· Primary Side Switch − Low Power Quarter Buck· Intermediate BUS SwitchSpecifications Parameter Symbol 10 secs Steady State Unit Drai...
Si7970DP: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK® Package· Dual MOSFET for Space Savings· 100% Rg TestedApplication· Primary Side Switch − Low Power Quarter Buc...
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Specifications Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 2...
| Parameter | Symbol | 10 secs | Steady State | Unit | |
| Drain-Source Voltage | VDS | 40 | V | ||
| Gate-Source Voltage | VGS | ±20 | |||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 10.2 | 6.5 | A |
| TA = 70 | 8.2 | 5.2 | |||
| Pulsed Drain Current | IDM | 40 | |||
| Continuous Source Current (Diode Conduction)a | IS | 2.9 | 1.2 | ||
| Single Avalanche Current | L = 0.1 mH | IAS | 30 | ||
| Single Avalanche Energy | EAS | 45 | mJ | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.5 | 1.4 | W |
| TA = 70 | 2.2 | 0.9 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||