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Si8902EDB

Features: ·TrenchFET® Power MOSFET· Ultra-Low rSS(on)· ESD Protected: 4000 V· New MICRO FOOT™ Chipscale Packaging ReducesFootprint Area, Profile (0.65 mm) and On-ResistancePer Footprint AreaApplication· Battery Protection Circuit- 1-2 Cell Li+/LiP Battery Pack for Portable DevicesSpecifi...

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SeekIC No. : 004490876 Detail

Si8902EDB: Features: ·TrenchFET® Power MOSFET· Ultra-Low rSS(on)· ESD Protected: 4000 V· New MICRO FOOT™ Chipscale Packaging ReducesFootprint Area, Profile (0.65 mm) and On-ResistancePer Footprint Ar...

Si8902EDB Data Sheet

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Part Number:
Si8902EDB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

·TrenchFET® Power MOSFET
· Ultra-Low rSS(on)
· ESD Protected: 4000 V
· New MICRO FOOT™ Chipscale Packaging Reduces
Footprint Area, Profile (0.65 mm) and On-Resistance
Per Footprint Area




Application

· Battery Protection Circuit
- 1-2 Cell Li+/LiP Battery Pack for Portable Devices




Specifications

Parameter Symbol 5secs Steady State Unit
Source1-Source2 Voltage VS1S2 20 V
Gate-Source Voltage VGS ±12
Continuous Source1-Source2 Current (TJ = 150)a TA = 25 IS1S2 5.0 3.9 A
TA = 85 3.4 2.8
Pulsed Source1-Source2 Current ISM 8
Maximum Power Dissipationa TA = 25 PD 1.7 1 W
TA = 85 0.8 0.5
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
Package Reflow Conditionsc VPR 215
IR/Convection 220





Description

Bi-Directional N-Channel 20-V (D-S) MOSFET
Si8902EDB



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