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Si9400DY Maximum Ratings

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175°C)a TA = 25°C ID ±2.5 A
TA = 70°C ±2.0
Pulsed Drain Current(10 s Pulse Width) IDM ±10
Continuous Source Current (Diode Conduction)a IS -2.0
Maximum Power DissipationaMOSFET)a, b TA = 25°C PD 2.5 W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C

Si9400DY Connection Diagram

Si9400DY  Connection Diagram

Si9400DY datasheet

SI9400DY
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