MOSFET 60V 3.5A 3W
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V |
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.5 A |
| Resistance Drain-Source RDS (on) : | 0.15 Ohms | Configuration : | Single |
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT |
| Package / Case : | SO-8 |

| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | 20 | ||
| Continuous Drain Current(TJ = 150)a | TA = 25 | ID | 3.5 | A |
| TA = 70 | 3.0 | |||
| Pulsed Drain Current | IDM | 30 | ||
| Continuous Source Current (Diode Conduction)a | IS | 2.5 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.0 | W |
| TA = 70 | 2.1 | |||
| Operating Junction and Storage Temperature Range | TJ,Tstg | 55 to 175 | ||