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SI9802DY

MOSFET 20V 4.5A 2W

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SeekIC No. : 00165316 Detail

SI9802DY: MOSFET 20V 4.5A 2W

SI9802DY Data Sheet

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Part Number:
SI9802DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 55 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 55 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12
Continuous Drain Current (TJ = 150)a TA = 25

 

ID

 ±4.5 A
TA = 70 ±3.6
Pulsed Drain Current(10 s Pulse Width) IDM ±25
Continuous Source Current (Diode Conduction)a IS ±1.7
Maximum Power Dissipationaa,b TA = 25 PD 2 W
TA = 70 1.3
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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