SI9928DY

Packaging :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5 A, 3.4 A
Resistance Drain-Source RDS (on) : 50 mOhms, 110 mOhms


Pinout




Specifications

Parameter		Symbol	N-Channel	P-Channel	Unit
Drain-Source Voltage		VDS	20	-20	V
Gate-Source Voltage		VGS	±12	±12
Continuous Drain Current (TJ = 150)a	TA = 25	ID	±5.0	±3.4	A
	TA = 70		±4.0	±2.8
Pulsed Drain Current		IDM	±10	±10
Continuous Source Current (Diode Conduction)a		IS	2.0	-2.0
Maximum Power Dissipationa	TA = 25	PD	2.0	2.0	W
	TA = 70		1.3	1.3
Operating Junction and Storage Temperature Range		TJ,Tstg	55 to 150