MOSFET 60V 3.7A 2.4W
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.7 A | ||
| Resistance Drain-Source RDS (on) : | 80 mOhms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 Narrow | Packaging : | Tube |

| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | ±20 | ||
| Gate-Source Voltage | TA = 25 | ID | ±3.7 | A |
| TA = 70 | ±3.2 | |||
| Pulsed Drain Current | IDM | 25 | ||
| Continuous Source Current (Diode Conduction)a | IS | 2 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 2.4 | W |
| TA = 70 | 1.7 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 | ||