SI9945AEY

MOSFET 60V 3.7A 2.4W

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SI9945AEY Picture
SeekIC No. : 00165337 Detail

SI9945AEY: MOSFET 60V 3.7A 2.4W

floor Price/Ceiling Price

Part Number:
SI9945AEY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/1

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.7 A
Resistance Drain-Source RDS (on) : 80 mOhms Configuration : Dual
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Configuration : Dual
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 80 mOhms
Continuous Drain Current : 3.7 A


Pinout

  Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20
Gate-Source Voltage TA = 25 ID ±3.7 A
TA = 70 ±3.2
Pulsed Drain Current IDM 25
Continuous Source Current (Diode Conduction)a IS 2
Maximum Power Dissipationa TA = 25 PD 2.4 W
TA = 70 1.7
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 175



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