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Part Number: Si9956DY

 

MFG: SI

 

 

Description: Dual N-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS™...


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Si9956DY General Description


Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.

Product availability: Si9956DY in SOT96-1 (SO8).

Si9956DY Maximum Ratings

Symbol
 Parameter Conditions
Typ
Max
Unit
VDS
 drain-source voltage (DC) Tj = 25 to 150
-
20
V
ID
 drain current (DC) Tamb = 25 ; pulsed; tp 10 s
-
3.5
A
Ptot
 total power dissipation Tamb = 25 ; pulsed; tp 10 s
-
2
W
Tj
 junction temperature  
-
150
RDSon
 drain-source on-state resistance VGS = 10 V; ID = 2.2 A
55
100
m
VGS = 4.5 V; ID = 1 A
70
200
m

Si9956DY Features

·Low on-state resistance
·Fast switching
·TrenchMOS™ technology.

Si9956DY Typical Application

· DC to DC convertors
· DC motor control
·Lithium-ion battery applications
·Notebook PC
·Portable equipment applications.

Si9956DY Connection Diagram

Si9956DY Connection Diagram

Si9956DY datasheet

SI9956DY
PDF/DataSheet Download

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