SI9956DY Selling Leads, Price trend , Vishay/Siliconix, SI9956DY DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00165778 Detail

SI9956DY: MOSFET 20V 3.5A 2W

SI9956DY Data Sheet

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Part Number:: SI9956DY
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2025/12/29

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	3.5 A
Resistance Drain-Source RDS (on) :	0.1 Ohms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 0.1 Ohms

Features:

·Low on-state resistance
·Fast switching
·TrenchMOS™ technology.

Application

· DC to DC convertors
· DC motor control
·Lithium-ion battery applications
·Notebook PC
·Portable equipment applications.

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Conditions	Typ	Max	Unit
V_DS	drain-source voltage (DC)	Tj = 25 to 150	-	20	V
I_D	drain current (DC)	Tamb = 25 ; pulsed; tp 10 s	-	3.5	A
P_tot	total power dissipation	Tamb = 25 ; pulsed; tp 10 s	-	2	W
T_j	junction temperature		-	150
R_DSon	drain-source on-state resistance	VGS = 10 V; ID = 2.2 A	55	100	m
R_DSon	drain-source on-state resistance	VGS = 4.5 V; ID = 1 A	70	200	m

Description

Dual N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™¹ technology.Product availability: Si9956DY in SOT96-1 (SO8).

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SI9956DY

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