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SI9958DY

MOSFET 20V 3.5A 2W

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SeekIC No. : 00165276 Detail

SI9958DY: MOSFET 20V 3.5A 2W

SI9958DY Data Sheet

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Part Number:
SI9958DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 0.1 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3.5 A
Resistance Drain-Source RDS (on) : 0.1 Ohms


Pinout

Connection Diagram


Specifications

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS ±20 ±20
Continuous Drain Current (TJ = 150°C)a TA = 25°C ID ±2.8 ±2.8 A
TA = 70°C ±14 ±14
Pulsed Drain Current IDM 1.7 1.7
Continuous Source Current (Diode Conduction)a IS 1.7 1.7
Maximum Power Dissipationa TA = 25°C PD 2.0 W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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