SiA906EDJ-T1-GE3, US $ .21-.35 , Vishay/Siliconix, SiA906EDJ-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00149094 Detail

SiA906EDJ-T1-GE3: MOSFET 20V 4.5A 7.8W 46mohm @ 4.5V

SiA906EDJ-T1-GE3 Data Sheet

US $ .21~.35 / Piece | Get Latest Price

Part Number:: SiA906EDJ-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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1~10
10~100
100~250

Unit Price
$.35
$.25
$.23
$.21

Processing time
15 Days
15 Days
15 Days
15 Days

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SiA906EDJ evaluate
DescriptionSiA906EDJ: Dual N-Channel 20-V (D-S) MOSFET
SIA907EDJT-T1-GE3 evaluate
US $.13 - .22 / Piece

MOSFET -20 Volts 4.5 Amps 7.8 Watts
SIA910EDJ-T1-GE3 evaluate
US $.23 - .39 / Piece

MOSFET 12V 4.5A/4.5A N-CH DUAL MOSFET

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 12 V	Continuous Drain Current :	4.5 A
Resistance Drain-Source RDS (on) :	46 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK SC-70-6 Dual	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4.5 A
Package / Case : PowerPAK SC-70-6 Dual
Resistance Drain-Source RDS (on) : 46 mOhms

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SiA906EDJ-T1-GE3

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