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SiA911DJ

Features: TrenchFET® Power MOSFETNew Thermally Enhanced PowerPAK®SC70 Package - Small Footprint Area - Low On-ResistanceApplicationLoad Switch, PA Switch and Battery Switch for Portable DevicesSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gat...

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SeekIC No. : 004491026 Detail

SiA911DJ: Features: TrenchFET® Power MOSFETNew Thermally Enhanced PowerPAK®SC70 Package - Small Footprint Area - Low On-ResistanceApplicationLoad Switch, PA Switch and Battery Switch for Portable Devi...

SiA911DJ Data Sheet

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Part Number:
SiA911DJ
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TrenchFET® Power MOSFET
New Thermally Enhanced PowerPAK®
SC70 Package
  - Small Footprint Area
  - Low On-Resistance


Application

Load Switch, PA Switch and Battery Switch for Portable Devices


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS - 20 V
Gate-Source Voltage VGS ± 8
Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 4.5a A
TC = 70 °C - 4.5a
TA = 25 °C - 3.6b, c
TA = 70 °C - 2.9b, c
Pulsed Drain Current IDM - 8
Continuous Source-Drain Diode Current TC = 25 °C IS - 4.5a
TA = 25 °C - 1.6b, c
Maximum Power Dissipation TC = 25 °C PD 6.5  
TC = 70 °C 5
TA = 25 °C 1.9b, c
TA = 70 °C 1.2b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
Soldering Recommendations (Peak Temperature)d, e   260




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