SiB800EDK

The SiB800EDK is designed as one kind of N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)Portable Devices; (2)DC/DC Converters. Also this device has some points of features:(1)Halogen-free According to IEC 61249-2-21; (2)LITTLE FOOT Plus Schottky Power MOSFET; (3)New Thermally Enhanced PowerPAK SC-75 Package: Small Footprint Area and Low On-Resistance and Thin 0.75 mm profile; (4)Typical ESD Protection 2800 V.

The absolute maximum ratings of the SiB800EDK can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/-6 V;(3)Continuous Drain Current (TJ = 150 °C): 1.3 or 1.5 A;(4)Pulsed Drain Current: 4 A;(5)Continuous Source-Drain Diode Current: 0.9 or 1.5 A;(6)Maximum Power Dissipation: 0.7 to 3.1 W;(7)Operating Junction and Storage Temperature Range: -55 to 150;(8)Soldering Recommendations (Peak Temperature): 260.

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 21 mV/;(3)VGS(th) Temperature Coefficient: -2.3 mV/;(4)Gate-Source Threshold Voltage: 0.40 to 1.0 V;(5)Gate-Source Leakage: +/-1 uA;(6)Zero Gate Voltage Drain Current: 1 or 10 uA;(7)On-State Drain Current: 4 A. If you want to know more information about the SiB800EDK, please download the datasheet in www.seekic.com or www.chinaicmart.com .