SiB900EDK

The SIB900EDK is designed as one kind of Dual N-Channel 20-V (D-S) MOSFET device that can be used in wide range of applications such as (1)load switch for portable devices; (2)low voltage load switch. And this device has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET?Power MOSFET; (3)New Thermally Enhanced PowerPAK-SC-75 Package are Small Footprint Area and Low On-Resistance and Thin 0.75 mm Profile; (4)Typical ESD Protection 2800 V; (5)Rated ESD Protection 1400 V; (6)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SIB900EDK can be summarized as:(1)Drain-Source Voltage: +/-20 V;(2)Gate-Source Voltage: +/- 6 V;(3)Pulsed Drain Current: 4 A;(4)Maximum Power Dissipation: 0.7 to 3.1 W;(5)Continuous Drain Current (TJ = 150 °C): 1.3 to 1.5 A;(6)Operating Junction and Storage Temperature Range: -55 to 150 ;(7)Soldering Recommendations (Peak Temperature): 260 .

The electrical characteristics of the SIB900EDK can be summarized as:(1)Drain-Source Breakdown Voltage: 20 V;(2)VDS Temperature Coefficient: 21 mV/°C;(3)VGS(th) Temperature Coefficient: -2.3 mV/°C;(4)Gate-Source Threshold Voltage: 0.40 to 1.0 V;(5)Gate-Source Leakage: ±1 uA;(6)On-State Drain Current: 4 A;(7)Forward Transconductance: 3.5 S. If you want to know more information about the SIB900EDK, please download the datasheet in www.seekic.com or www.chinaicmart.com .