SiB900EDK-T1-GE3, US $ .2-.41 , Vishay/Siliconix, SiB900EDK-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00153624 Detail

SiB900EDK-T1-GE3: MOSFET 20V 1.5A 3.1W 225mohm @ 4.5V

SiB900EDK-T1-GE3 Data Sheet

US $ .2~.41 / Piece | Get Latest Price

Part Number:: SiB900EDK-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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10~100
100~250

Unit Price
$.41
$.28
$.24
$.2

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2025/12/25

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Recent History
What is this?

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SpecificationsDescriptionSIB900EDK Dual N-Channel 20-V (D-S) MOSFET The SIB900EDK is designed as ...
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DescriptionSiB911DK Dual P-Channel 20-V (D-S) MOSFET
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MOSFET DUAL P-CH 20V(D-S)

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 6 V	Continuous Drain Current :	1.5 A
Resistance Drain-Source RDS (on) :	225 mOhms at 4.5 V	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK SC-75-6	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Continuous Drain Current : 1.5 A
Gate-Source Breakdown Voltage : +/- 6 V
Package / Case : PowerPAK SC-75-6
Resistance Drain-Source RDS (on) : 225 mOhms at 4.5 V

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SiB900EDK-T1-GE3

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