Features: • Advanced Process Technology• Dynamic dV/dt Rating• 175 Operating Temperature• Fast Switching• Fully Avalanche Rated• Ease of Paralleling• Simple Drive Requirements• Lead (Pb)-free AvailableSpecifications Symbol Parameter Uni...
SiHF634NL: Features: • Advanced Process Technology• Dynamic dV/dt Rating• 175 Operating Temperature• Fast Switching• Fully Avalanche Rated• Ease of Paralleling• Simpl...
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|
Symbol |
Parameter |
Units |
Limit |
|
VDS |
Drain-Source Voltage |
V |
250 |
|
VGS |
Gate-Source Voltage |
V |
± 20 |
|
ID |
Continuous Drain Current VGS at 10 V TC = 25 TC = 100 |
A |
8.0 5.6 |
|
IDM |
Pulsed Drain Currenta |
A |
32 |
| Linear Derating Factor |
W/ |
0.59 | |
|
EAS |
Single Pulse Avalanche Energyb |
mJ |
110 |
|
IAR
|
Avalanche Currenta |
A |
4.8 |
|
EAR |
Repetiitive Avalanche Energya |
mJ |
8.8 |
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRF634NL/SiHF634NL, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package of IRF634NL/SiHF634NL is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRF634NL/SiHF634NL) is available for low-profile application.