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SiHF840AL

Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and Current• Effective Coss Specified• Lead (Pb)-free AvailableSpecifications PARAMETE...

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SiHF840AL: Features: • Low Gate Charge Qg Results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and...

SiHF840AL Data Sheet

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Part Number:
SiHF840AL
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free Available


Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current VGS at 10 V TC = 25 ID 8.0 A
TC = 100 5.1
Pulsed Drain Currenta IDM 32
Linear Derating Factor   1.0 W/
Single Pulse Avalanche Energyb EAS 510 mJ
Repetitive Avalanche Currenta IAR 8.0 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation (PCB Mount)e TA = 25 PD 3.1 W
Maximum Power Dissipation TC = 25 125 W
Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
Soldering Recommendations (Peak Temperature) for 10 s   300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 16 mH, RG = 25 , IAS = 8.0 A (see fig. 12).
c. ISD 8.0 A, dI/dt 100 A/s, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF840A/SiH840A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply


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