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SiHF9Z24S

Features: • Advanced Process Technology• Surface Mount (IRF9Z24S/SiHF9Z24S)• Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L)• 175 Operating Temperature• Fast Switching• P-Channel• Fully Avalanche Rated• Lead (Pb)-free AvailableSpecifications PARAMET...

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SiHF9Z24S: Features: • Advanced Process Technology• Surface Mount (IRF9Z24S/SiHF9Z24S)• Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L)• 175 Operating Temperature• Fast Switching&#...

SiHF9Z24S Data Sheet

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Part Number:
SiHF9Z24S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

• Advanced Process Technology
• Surface Mount (IRF9Z24S/SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L)
• 175 Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available




Specifications

PARAMETER SYMBOL RATING UNITS
Drain-Source Voltage VDS - 60 V
Gate-Source Voltage VGS ±20
Continuous Drain Currente VGS at - 10 V Tc=25 ID - 11 A
Tc=100 - 7.7
Pulsed Drain Currenta, e IDM - 44
Linear Derating Factor   0.40 W/
Single Pulse Avalanche Energyb, e EAS 240 mJ
Repetitive Avalanche Currenta IAR - 11 A
Repetitive Avalanche Energya EAR 6.0 mJ
* Pb containing terminations are not RoHS compliant, exemptions may apply




Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IR9Z24L/SiH9Z24L, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die size up to HEX-4. IR9Z24L/SiH9Z24L provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

The through-hole version (IR9Z24L/SiH9Z24L) is available for low-profile applications.






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