SiHFBC40AS

Features:

• Low Gate Charge Qg results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free Available



Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching



Specifications

Parameter			Symbol	Limit	Unit
Drain-Source Voltage			VDS	600	V
Gate-Source Voltage			VGS	±30	V
Continuous Drain Currente	VGS at 10 V	TC=25	ID	6.2	A
		TC=70		3.9
Pulsed Drain Currenta, e			IDM	25	A
Linear Derating Factor				1.0	W/
Single Pulse Avalanche Energyb			EAS	570	mJ
Repetitive Avalanche Currenta			IAR	6.2	A
Repetitive Avalanche Energya			EAR	13	mJ
Maximum Power Dissipation	TC=25		PD	125	W
Peak Diode Recovery dV/dtc, e			dV/dt	6.0	V/ns
Operating Junction and Storage Temperature Range			TJ, TSTG	-50 to +150
Soldering Recommendations (Peak Temperature)	for 10 s			300d

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25, L = 29.6 mH, RG = 25 , I_AS = 6.2 A (see fig. 12).
c. I_SD 6.2 A, dI/dt 88 A/µs, V_DD V_DS, T_J 150.
d. 1.6 mm from case.
e. Uses IRFBC40A/SiHFBC40A data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply