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SiHFP31N50L

Features: • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications• Lower Gate Charge Results in Simpler Drive Requirements• Enhanced dV/dt Capabilities Offer Improved Ruggedness• Higher Gate Voltage Threshold Offers Improved Noise Immunity•...

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SiHFP31N50L: Features: • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications• Lower Gate Charge Results in Simpler Drive Requirements• Enhanced dV/dt Capabilities ...

SiHFP31N50L Data Sheet

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Part Number:
SiHFP31N50L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive Requirements
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise Immunity
• Lead (Pb)-free Available


Application

• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications


Specifications

Parameter
Symbol
Maximum
Unit
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V
Continuous Drain Current TC=25
TC=100
ID
31
A
20
A
Pulsed Drain Current
IDM
124
A
Linear Derating Factor
3.7
W/
Single Pulse Avalanche Energy
EAS
460
mJ
Avalanche Current
IAR
22
A
Repetitive avalanche energy L=0.1mH
EAR
24
mJ
Power Dissipation TC=25
PD

3.1
W
Junction and Storage Temperature Range
TJ,TSTG
-55 to 150



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