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SiHFS9N60A

Features: • Low Gate Charge Qg results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and Current• Lead (Pb)-free AvailableApplication• Switch Mode Power Supply (SMPS)• Un...

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SiHFS9N60A: Features: • Low Gate Charge Qg results in Simple Drive Requirement• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness• Fully Characterized Capacitance and Avalanche Voltage and...

SiHFS9N60A Data Sheet

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Part Number:
SiHFS9N60A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low Gate Charge Qg results in Simple Drive Requirement
• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Lead (Pb)-free Available


Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching


Specifications

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ± 30
Continuous Drain Current VGS at 10 V TC = 25 °C ID 9.2 A
TC = 100 °C 5.8
Pulsed Drain Currenta IDM 37
Linear Derating Factor   1.3 W/°C
Single Pulse Avalanche Energyb EAS 290 mJ
Repetitive Avalanche Currenta IAR 9.2 A
Repetitive Avalanche Energya EAR 17 mJ
Maximum Power Dissipation TC = 25 °C PD 170 W
Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C
Soldering Recommendations (Peak Temperature) for 10 s   300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 6.8 mH, RG = 25 , IAS = 9.2 A (see fig. 12).
c. ISD 9.2 A, dI/dt 50 A/s, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply


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