SiHLZ24L

The SiHLZ24L is designed as one kind of third generation power MOSFET device that provides the highest power capability and lowest possible on-resistance in any existing surface mount package. Also this device is available for low-profile applications.

Features of the SiHLZ24L are:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)Advanced Process Technology; (3)Surface Mount (IRFZ14S, SiHFZ14S); (4)Low-Profile Through-Hole (IRFZ14L, SiHFZ14L); (5)175 Operating Temperature; (6)Fast Switching; (7)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SiHLZ24L can be summarized as:(1)Drain-Source Voltage: 60 V;(2)Gate-Source Voltage: +/- 10 V;(3)Continuous Drain Current: 17 or 12 A;(4)Pulsed Drain Current: 68 A;(5)Linear Derating Factor: 0.40 or 0.025 W/°C;(6)Single Pulse Avalanche Energy: 110 mJ;(7)Maximum Power Dissipation: 60 or 3.7 W;(8)Peak Diode Recovery dV/dt: 4.5 V/ns;(9)Operating Junction and Storage Temperature Range: -55 to +175 . If you want to know more information about the SiHLZ24L, please download the datasheet in www.seekic.com or www.chinaicmart.com .