SiHLZ14S

Features:

• Advanced Process Technology
• Surface Mount (IRLZ14S/SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L/SiHLZ14L)
• 175 Operating Temperature
• Fast Switching
• Lead (Pb)-free Available


Specifications

PARAMETER			SYMBOL	LIMIT	UNIT
Drain-Source Voltagee			VDS	60	V
Gate-Source Voltage			VGS	± 10
Continuous Drain Current	VGS at 5 V	TC = 25	ID	10	A
		TC = 100	ID	7.2
Pulsed Drain Currenta, e			IDM	40
Linear Derating Factor				0.29	W/
Single Pulse Avalanche Energyb, e			EAS	68	mJ
Maximum Power Dissipation		TC = 25	PD	43	W
		TA = 25	PD	3.7
Peak Diode Recovery dV/dtc, e			dV/dt	4.5	V/ns
Operating Junction and Storage Temperature Range			TJ, Tstg	- 55 to + 175
Soldering Recommendations (Peak Temperature)		for 10 s		300d

Description

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit of IRLZ44L/SiHLZ44L, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications.

The D²PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. IRLZ44L/SiHLZ44L provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D²PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

The through-hole version (IRLZ44L/SiHLZ44L) is available for low-profile applications.