SiHL540

Features: • Dynamic dV/dt Rating• Repetitive Avalanche Rated• Logic-Level Gate Drive• RDS(on) Specified at VGS = 4 V and 5 V• 175 Operating Temperature• Fast Switching• Ease of Paralleling• Lead (Pb)-free AvailableSpecifications PARAMETER ...

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SeekIC No. : 004491194 Detail

SiHL540: Features: • Dynamic dV/dt Rating• Repetitive Avalanche Rated• Logic-Level Gate Drive• RDS(on) Specified at VGS = 4 V and 5 V• 175 Operating Temperature• Fast Swi...

floor Price/Ceiling Price

Part Number:
SiHL540
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Description



Features:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 175 Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available



Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±10
Continuous Drain Current
VGS at 10 V
TC = 25
ID
28
A
TC = 100
20
Pulsed Drain Currenta, e
IDM
110
Linear Derating Factor
1.0
W/

Single Pulse Avalanche Energyb

EAS

440

mJ

Avalanche Currenta

IAR

28

A

Single Pulse Avalanche Energyb, e
EAR
15
mJ
Maximum Power Dissipation
TC = 25
PD
150
W
Peak Diode Recovery dV/dtc, e
dV/dt
5.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)
for 10 s
300d

Mounting Torque

6-32 or M3 screw

 

10

lbf ` in

1.1

N ` m

Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, Starting TJ = 25 , L = 260 H, RG = 25 , IAS = 30 A (see fig. 12).
c. ISD 30 A, dI/dt 200 A/s, VDD VDS, TJ 175 .
d. 1.6 mm from case.
e. Uses IRFZ34/SiHFZ34 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply



Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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