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SiHLI520G

Features: • Isolated Package• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)• Sink to Lead Creepage Distance = 4.8 mm• Logic-Level Gate Drive• RDS (on) Specified at VGS = 4 V and 5 V• Fast Switching• Ease of Paralleling• Lead (Pb)-free Avai...

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SiHLI520G: Features: • Isolated Package• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)• Sink to Lead Creepage Distance = 4.8 mm• Logic-Level Gate Drive• RDS (on) Specif...

SiHLI520G Data Sheet

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Part Number:
SiHLI520G
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Logic-Level Gate Drive
• RDS (on) Specified at VGS = 4 V and 5 V
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available


Specifications

PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 10
Continuous Drain Current
VGS at 5 V
TC = 25
ID
7.2
A
TC = 100
5.1
Pulsed Drain Currenta
IDM
29
Linear Derating Factor
0.24
W/
Single Pulse Avalanche Energyb
EAS
170
mJ
Repetitive Avalanche Currenta
IAR
7.2
A
Repetitive Avalanche Energya
EAR
3.7
mJ
Maximum Power Dissipation
TC = 25
PD
37
W
Peak Diode Recovery dV/dtc
dV/dt
5.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf ` in
1.1
N ` m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 , L = 4.9 mH, RG = 25 , IAS = 7.2 A (see fig. 12).
c. ISD 9.2 A, dI/dt 110 A/s, VDD VDS, TJ 175 .
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply


Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and ost-effectiveness.The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.




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