Features: • Surface Mount• Available in Tape and Reel• Dynamic dV/dt Rating• Logic-Level Gate Drive• RDS(on) Specified at VGS = 4 V and 5 V• Fast Switching• Ease of Paralleling• Lead (Pb)-free AvailableSpecifications Parameter Symbol L...
SiHLL014: Features: • Surface Mount• Available in Tape and Reel• Dynamic dV/dt Rating• Logic-Level Gate Drive• RDS(on) Specified at VGS = 4 V and 5 V• Fast Switching•...
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|
Parameter |
Symbol |
Limit |
Unit | ||
| Drain-Source Voltage |
VDS |
60 |
V | ||
| Gate-Source Voltage |
VGS |
±10 |
V | ||
| Drain Current-Continuous | VGS at 10 V | TC=25 |
ID |
2.7 1.7 |
A |
| TC=100 | |||||
| Pulsed Drain Currenta |
IDM |
22 |
A | ||
| Linear Derating Factor |
0.025 |
W/ | |||
| Linear Derating Factor (PCB Mount)e |
0.017 | ||||
| Single Pulse Avalanche Energyb |
EAS |
100 |
mJ | ||
| Repetitive Avalanche Currenta |
IAR |
2.7 |
A | ||
| Repetitive Avalanche Energya |
EAR |
0.31 |
mJ | ||
| Maximum Power Dissipation | TC=25 |
PD |
3.1 2.0 |
W | |
| Ta=25 | |||||
| Peak Diode Recovery dV/dtc |
dV/dt |
4.5 |
V/ns | ||
| Operating Junction and S torage Temperature R ange |
TJ, TSTG |
-55 to 150 |
|||
| Soldering Recommendations (Peak Temperature) | for 10 s | 300d | |||
Third generation Power MOSFETs of SiHLL014 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package of SiHLL014 is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.