SiR166DP

The SiR166DP is designed as one kind of N-Channel 30-V (D-S) MOSFET device that can be used in wide range of applications such as (1)Notebook PC Core - Low Side; (2)VRM; (3)POL. And this device has some points of features such as (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Gen III Power MOSFET; (3)New MOSFET Technology Optimized for Ringing Reduction in Switching Application; (4)100 % Rg and UIS Tested; (5)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SiR166DP can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/-20 V;(3)Continuous Drain Current (TJ = 150 °C): 40 to 21 A;(4)Pulsed Drain Current: 70 A;(5)Continuous Source-Drain Diode Current: 40 to 4.5 A;(6)Single Pulse Avalanche Current: 40 A;(7)Single Pulse Avalanche Energy: 80 mJ;(8)Maximum Power Dissipation: 48 to 3.2 W;(9)Operating Junction and Storage Temperature Range: -55 to 150 ;(10)Soldering Recommendations (Peak Temperature): 260 . If you want to know more information such as the electrical characteristics about the SiR166DP, please download the datasheet in www.seekic.com or www.chinaicmart.com.