SiR410DP

The SiR410DP is designed as one kind of N-Channel 20-V (D-S) MOSFET device that can be used in DC/DC converter applications. And this device also has some points of features:(1)Halogen-free; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested.

The absolute maximum ratings of the SiR410DP can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/-20 V;(3)Continuous Drain Current (TJ = 150 °C): 18.6 to 35 A;(4)Pulsed Drain Current: 60 A;(5)Pulsed Drain Current: 35 A;(6)Avalanche Energy: 61 mJ;(7)Continuous Source-Drain Diode Current: 3.5 A or 30 A;(8)Maximum Power Dissipation: 2.7 W to 36 W;(9)Operating Junction and Storage Temperature Range: -55 to +150 ;(10)Soldering Recommendations (Peak Temperature): 260 . If you want to know more information about the SiR410DP, please download the datasheet in www.seekic.com or www.chinaicmart.com .