SiR424DP

The SiR424DP is designed as one kind of N-Channel 20-V (D-S) MOSFET device that can be used in (1)Buck Converters; (2)POL; (3)DC/DC applications. And this device also has some points of features:(1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested; (5)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SiR424DP can be summarized as:(1)Drain-Source Voltage: 20 V;(2)Gate-Source Voltage: +/-20 V;(3)Continuous Drain Current (TJ = 150 °C): 18.7 to 30 A;(4)Pulsed Drain Current: 70 A;(5)Avalanche Current: 35 A;(6)Avalanche Energy: 61 mJ;(7)Continuous Source-Drain Diode Current: 4 A to 30 A;(8)Maximum Power Dissipation: 3.1 W to 41.7 W;(9)Operating Junction and Storage Temperature Range: -55 to +150 ;(10)Soldering Recommendations (Peak Temperature): 260 . If you want to know more information about the SiR424DP, please download the datasheet in www.seekic.com or www.chinaicmart.com .