PinoutSpecificationsDescriptionThe SiR460DP is designed as one kind of N-Channel 30-V (D-S) MOSFET device that can be used in wide range of applications such as (1)notebook vcore; (2)DC/DC. And this device has some points of features such as (1)Halogen-free According to IEC 61249-2-21; (2)TrenchFE...
SiR460DP: PinoutSpecificationsDescriptionThe SiR460DP is designed as one kind of N-Channel 30-V (D-S) MOSFET device that can be used in wide range of applications such as (1)notebook vcore; (2)DC/DC. And this...
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The SiR460DP is designed as one kind of N-Channel 30-V (D-S) MOSFET device that can be used in wide range of applications such as (1)notebook vcore; (2)DC/DC. And this device has some points of features such as (1)Halogen-free According to IEC 61249-2-21; (2)TrenchFET Gen III Power MOSFET; (3)100 % Rg Tested; (4)100 % Avalanche Tested.
The absolute maximum ratings of the SiR460DP can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/-20 V;(3)Continuous Drain Current (TJ = 150 °C): 40 to 19.4 A;(4)Pulsed Drain Current: 70 A;(5)Continuous Source-Drain Diode Current: 40 to 4.5 A;(6)Single Pulse Avalanche Current: 30 A;(7)Single Pulse Avalanche Energy: 45 mJ;(8)Maximum Power Dissipation: 48 to 3.2 W;(9)Operating Junction and Storage Temperature Range: -55 to 150 ;(10)Soldering Recommendations (Peak Temperature): 260 . If you want to know more information such as the electrical characteristics about the SiR460DP, please download the datasheet in www.seekic.com or www.chinaicmart.com.