SiR492DP

The SiR492DP is designed as one kind of N-Channel 12-V (D-S) MOSFET device that can be used in wide range of applications such as (1)secondary synchronous rectification; (2)point-of-load; (3)load switch. Also this device has some points of features:(1)Halogen-free; (2)TrenchFET Power MOSFET; (3)Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile; (4)100 % Rg Tested.

The absolute maximum ratings of the SiR492DP can be summarized as:(1)Drain-Source Voltage: 12 V;(2)Gate-Source Voltage: +/-8 V;(3)Continuous Drain Current (TJ = 150 °C): 26 or 40 A;(4)Pulsed Drain Current: 70 A;(5)Continuous Source-Drain Diode Current: 4.5 or 40 A;(6)Maximum Power Dissipation: 3.2 to 48 W;(7)Operating Junction and Storage Temperature Range: -55 to 150;(8)Soldering Recommendations (Peak Temperature): 260.

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: 12 V;(2)VDS Temperature Coefficient: 12 mV/;(3)VGS(th) Temperature Coefficient: -3.2 mV/;(4)Gate-Source Threshold Voltage: 0.4 to 1.0 V;(5)Gate-Source Leakage: +/-100 nA;(6)Zero Gate Voltage Drain Current: 1 or 10 uA;(7)On-State Drain Current: 20 A. If you want to know more information about the SiR492DP, please download the datasheet in www.seekic.com or www.chinaicmart.com .