SiR850DP

The SiR850DP is designed as one kind of N-Channel 25-V (D-S) MOSFET device that can be used in wide range of applications such as (1)Server; (2)POL; (3)DC/DC High Side. And this device has some points of features such as (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET; (3)100 % Rg Tested; (4)100 % UIS Tested; (5)Compliant to RoHS Directive 2002/95/EC.

The absolute maximum ratings of the SiR850DP can be summarized as:(1)Drain-Source Voltage: 25 V;(2)Gate-Source Voltage: +/-20 V;(3)Continuous Drain Current (TJ = 150 °C): 50 to 17.2 A;(4)Pulsed Drain Current: 70 A;(5)Continuous Source-Drain Diode Current: 37.2 to 4 A;(6)Single Pulse Avalanche Current: 35 A;(7)Single Pulse Avalanche Energy: 61 mJ;(8)Maximum Power Dissipation: 44.6 to 3.1 W;(9)Operating Junction and Storage Temperature Range: -55 to 150 ;(10)Soldering Recommendations (Peak Temperature): 260 . If you want to know more information such as the electrical characteristics about the SiR850DP, please download the datasheet in www.seekic.com or www.chinaicmart.com.