MFG:T Package Cooled:SOP D/C:04+
MFG: T
Package Cooled: SOP
D/C: 04+
Description: The T0905 is a monolithic integrated power amplifier IC manufactured with Atmel's Silicon-Germanium (S...
The T0905 is a monolithic integrated power amplifier IC manufactured with Atmel's Silicon-Germanium (SiGe) process. Due to its open architecture, the device can be used either as a two or three-stage amplifier. Every stage can be matched individually, thus allowing applications in a wide frequency range. The T0905 can be used from 135 MHz up to 600 MHz in both linear and non-linear (saturated) mode. The power gain can be set dynamically by means of an analog control input optionally for each single stage or for the entire power amplifier. Constant gain mode is also possible.
The T0905 is suited for CW mode up to 35 dBm. These features, including wide power ramp control, make the T0905 a very flexible power amplifier for many different applications.
Apart from telephone applications, the T0905 can also be used for car identification systems and several other wireless communication systems. The single supply voltage operation at +3.5 V and a negligible leakage current in power-down mode enable a remarkable simplification of the application's power management.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device eliability.
| Parameters | Symbol | Value | Unit |
| Supply voltage VCC, no RF | VCC1, VCC2, VCC3 | 0 to +5.5 | V |
| Input power | PRFin | 10 | dBm |
| Gain control voltage(1) | Vctl | 0 to +2.5 | V |
| Operating case temperature | Tc | -40 to 100 | |
| Storage temperature | Tstg | -40 to +150 | |
| Maximum output power | PRFout | 36 | dBm |
T090
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