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T2800

Specifications Rating Symbol Value Unit Peak Repetitive Off-State Voltage(1)(TJ = 40 to 100°C, Gate Open)T2800 BDM VDRM 200400600 Volts RMS On-State Current (TC = +80°C)(Conduction Angle = 360°) IT(RMS) 8 Amps Peak Non-repetitive Surge Current(One Full ...

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T2800: Specifications Rating Symbol Value Unit Peak Repetitive Off-State Voltage(1)(TJ = 40 to 100°C, Gate Open)T2800 BDM VDRM 200400600 Volts RMS On-State Current (TC = +8...

T2800 Data Sheet

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Part Number:
T2800
Supply Ability:
5000

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Upload time: 2024/4/28

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Product Details

Description



Specifications

Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1)
(TJ = 40 to 100°C, Gate Open)
T2800 B
D
M
VDRM
200
400
600
Volts
RMS On-State Current (TC = +80°C)
(Conduction Angle = 360°)
IT(RMS)
8
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz TJ = +80°C)
ITSM
100
Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I2t
40
A2s
Peak Gate Power
(TC = +80°C, Pulse Width = 1 s)
PGM
16
Watts
Average Gate Power
PG(AV)
0.35
Watt
Operating Junction Temperature Range
TJ
40 to +100
°C
Storage Temperature Range
Tstg
40 to +150
°C


1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.




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