T2800D

On-State RMS Current (It RMS) :
Mounting Style : Through Hole
Package / Case : TO-220AB
Rated Repetitive Off-State Voltage VDRM : 400 V
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Holding Current (Ih Max) : 30 mA
Gate Trigger Voltage (Vgt) : 2.5 V
Packaging : Box
Breakover Current IBO Max : 100 A
Gate Trigger Current (Igt) : 60 mA


Specifications

Rating	Symbol	Value	Unit
Peak Repetitive OffState Voltage(1) (TJ = 40 to +125°C, Gate Open)	VDRM VRRM	400	Volts
OnState RMS Current (All Conduction Angles, TC = +80°C)	IT(RMS)	8.0	Amps
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz TC = +80°C)	ITSM	100	Amps
Circuit Fusing Considerations (t = 8.3 ms)	I2t	40	A2s
Peak Gate Power (TC = +80°C, Pulse Width = 10 s)	PGM	16	Watts
Average Gate Power (TC = +80°C, t= 8.3 ms)	PG(AV)	0.35	Watt
Peak Gate Current (Pulse Width = 10 s, TC = +80°C)	IGM	4.0	Amp
Operating Junction Temperature Range	TJ	40 to +110	°C
Storage Temperature Range	Tstg	40 to +150	°C

(1) V_DRM and V_RRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.