T431616B

Features: · +2.7 to +3.6V power supply· Dual banks operation· LVTTL compatible with multiplexed address· All inputs are sampled at the positive going edge of system clock· Burst Read Single-bit Write operation· DQM for masking· Auto refresh and self refresh· 32ms refresh period (2K cycle)· MRS cyc...

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T431616B Picture
SeekIC No. : 004511151 Detail

T431616B: Features: · +2.7 to +3.6V power supply· Dual banks operation· LVTTL compatible with multiplexed address· All inputs are sampled at the positive going edge of system clock· Burst Read Single-bit Writ...

floor Price/Ceiling Price

Part Number:
T431616B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

· +2.7 to +3.6V power supply
· Dual banks operation
· LVTTL compatible with multiplexed address
· All inputs are sampled at the positive going edge of system clock
· Burst Read Single-bit Write operation
· DQM for masking
· Auto refresh and self refresh
· 32ms refresh period (2K cycle)
· MRS cycle with address key programs
- CAS Latency ( 1 & 2 & 3 )
- Burst Length ( 1 , 2 , 4 , 8 & full page)
- Burst Type (Sequential & Interleave)
· Available package type in 50 pin TSOP(II) and 60-pin CSP



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative To Vss
VIN,VOUT
-1.0 to 4.6
V
Supply Voltage Relative To Vss
VDD,VDDQ
-1.0 to 4.6
V
Short circuit Output Current
Iout
50
mA
Power Dissipation
PD
1
W
Operating Temperature
TOPR
10 to +85
Storage Temperature
Tstg
-55 to 125


Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The T431616B is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clockcycle . Range of operating frequencies , programmable burst length and programmable latencies allow the T431616B to be useful for a variety of high bandwidth , high performance memory system applications.




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