T9G00110

The T9G00110 is designed for phase control applications. These are all-diffused, press-pak devices employing the field-proven amplifying gate. The features of T9G00110 are: (1)low on-state voltage; (2)high di/dt capability; (3)high dv/dt capability; (4)hermetic packaging; (5)excellent surge and I2t ratings.

The following is about the maximum ratings of T9G00110: (1)RMS on-state current, TC=82: 1590A; (2)average on-state current: 1000A; (3)peak one cycle surge (non-repetitive) on-state current 60Hz: 17000A; (4)peak one cycle surge (non-repetitive) on-state current 50Hz: 15500A; (5)critical rate-of-rise of on-state current(non-repetitive): 300A/sec; (6)critical rate-of-rise of on-state current(repetitive): 150A/sec; (7)I2t for one cycle, 60Hz: 1,203,000 A2sec; (8)peak gate power dissipation: 16W; (9)average gate power dissipation: 3W; (10)storage temperature: -40 to 150.

The following is about the electrical characteristics of T9G00110: (1)peak on-state voltage: 1.75V at ITM=1500A, TJ=25; (2)forward leakage, peak: 75mA at TJ=125, VDRM-rated; (3)reverse laekage, peak: 75mA at TJ=125, VDRM-rated; (4)typical turn-off time: 350sec; (5)maximum thermal resistance, double sided cooling junction to case: 0.023/W.