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TC1202

Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• Lg = 0.25 m, Wg = 300 m• All-Gold Metallization for High Reliability• 100 % DC TestedSpecifications Symbol Parameter Rating VDS Drain-Source V...

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SeekIC No. : 004513039 Detail

TC1202: Features: • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• Lg = 0.25 m, Wg = 300 m• All-Gold Metallization for High Reli...

TC1202 Data Sheet

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Part Number:
TC1202
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
• High Associated Gain: Ga = 12 dB Typical at 12 GHz
• Lg = 0.25 m, Wg = 300 m
• All-Gold Metallization for High Reliability
• 100 % DC Tested


Specifications

Symbol Parameter
Rating
VDS Drain-Source Voltage
5 V
VGS Gate-Source Voltage
-3.0 V
IDS Drain Current
IDSS
IGS Gate Current
300 A
Pin RF Input Power, CW
17 dBm
PT Continuous Dissipation
300 mW
TCH Channel Temperature
175
TSTG Storage Temperature
- 65 to +175



Description

The TC1202 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.




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