TC5117400BSJ

• 4,194,304 word by 4 bit organization
• Fast access time and cycle time
• Single power supply of 5V±10% with a built-in V_BB generator
• Low Power
- 605mW MAX. Operating
- (TC5117400BSJ/BST-60)
- 523mW MAX. Operating
- (TC5117400BSJ/BST-70)
- 5.5mW MAX. Standby
• Outputs unlatched at cycle end allows twodimensionalchip selection
• Common I/O capability using "EARLY WRITE"operation
• Read-Modify-Write, CAS before RAS refresh,RAS-only refresh, Hidden refresh, Fast Page Mode and Test Mode capability
• All inputs and outputs TTL compatible
• 2048 refresh cycles/32ms
• Package TC5117400BSJ: SOJ26-P-300C TC5117400BST: TSOP26-P-300D

The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,both internally and to the system user. Multiplexed address inputs permit the TC5117400BSJ/BST to be packaged in a 26/24 pin plastic SOJ (300mil), and 26/24 pin plastic TSOP (300mil). The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features of TC5117400BSJ include single power supply of 5V ±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.