TC5164805BJ

TC5164805BJ is an EDO (hyper page) dynamic RAM organized as 8,388,608 words by 8 bits. There are some features of TC5164805BJ as follows. First is 8,388,608-word by 8-bit organization. The second is fast acess time and cycle time. Then is single  power supply of 3.3 V±0.3 V with a built-in VBB generator. Next is low power dissipation (max). The fifth is outputs unlatched at cycle end, allowing two-dimensional chip section. The sixth is read-modify-write and EDO (hyper page mode) capability. The last one is all inputs and outputs LVTTL compatible.

What comes next is about the maximum ratings of TC5164805BJ . The VIN (input voltage) is from -0.3 to VCC+0.3 V. The VOUT (output voltage) is from -0.3 to VCC+0.3 V. The VCC (power supply voltage) is from -0.3 to 4.6 V. The PD (power consumption) is 1.0 W. The Tstg (storage temperature) is from -55 to +150. The Topr (operating temperature) is from 0 to +70. The Tsolder (soldering temperature (10 s)) is +260. The IOUT (short circuit output current) is 50 mA.

The following is about the recommended DC operating conditions of TC5164805BJ (Ta=0 to 70). The minimum VCC (supply voltage) is 3.0 V, the typical is 3.3 V and the maximum is 3.6 V. The minimum VIH (input high voltage) is 2.0 V and the maximum is VCC+0.3 V. The minimum VIL (input low voltage) is -0.3 V and the maximum is 0.8 V. Then is about the capacitance (VCC=3.3 V±0.3 V, f=1 MHz, Ta=0 to 70). The maximum CI1 (input capacitance (address)) is 5 pF. The maximum CI2 (input capacitance (RAS, CAS, WE, OE)) is 7 pF. The maximum CO (I/O capacitance (I/O1 to I/O8)) is 7 pF.