TCS800

Maximum Power Dissipation
Device Dissipation @25^{1..............} 1944 W
Maximum Voltage and Current
Collector to Base Voltage (BV_ces) .........65V
Emitter to Base Voltage (BV_ebo) .........3.5 V
Collector Current (I_c) ................50 A
Maximum Temperatures
Storage Temperature......... -65 to +200
Operating Junction Temperature ......+230

The TCS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 MHz, with the pulse width and duty required for TCAS applications. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.