TD250N

The TD250N is designed by the european power-semiconductor and electronics company.

Some absolute maximum ratings TD250N have been concluded into several points as follow. (1)Its repetitive peak forward off-state voltage would be 600V, 800V, 1000V. (2)Its reverse voltage would be 1200V, 1400V, 1600V. (3)Its non-repetitive peak forward off-state voltage would be 1800V. (4)Its non-repetitive peak reverse voltage would be +100V. (5)Its RMS on-state current would be 410A. (6)Its average on-state current would be 250A at tc=85°C. (7)Its surge current would be 8000A at tvj=25°C and tp=10ms. (8)Its I2t value would be 320000A2s at Tvj=25°C and tp=10ms. (9)Its current would be 150A/us. (10)Its voltage would be 1000V/us. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics TD250N are concluded as follow. (1)Its on-state voltage would be max 1.5V. (2)Its threshold voltage would be 0.8V. (3)Its slope resistance would be 0.7mohms. (4)Its gate trigger current would be max 200mA. (5)Its gate trigger voltage would be max 2V. (6)Its gate non-trigger current would be max 10mA. (7)Its gate non-trigger voltage would be max 0.2V. (8)Its holding current would be max 300mA. (9)Its latching current would be max 1.2A. (10)Its forward off-state and reverse current would be max 50mA. (11)Its gate controlled delay time would be max 3us. (12)Its circuit commutated turn-off time would be typ 250us. (13)Its insulation test voltage would be 3kV. (14)Its thermal resistance junction to case would be max 0.065°C/W. (15)Its heatsink would be max 0.02°C/W per module. (16)Its operating temperature range would be from -40°C to 125°C. (17)Its storage temperature range would be from -40°C to 130°C. (18)Its max junction temperature would be 125°C. And so on. If you have any question or suggestion or want to know more information please contact us for TD250N details. Thank you!