TE28F010-120 Selling Leads, Price trend, TE28F010-120 DataSheet download, circuit diagram from SeekIC.com

Features: ` Flash Electrical Chip-Erase- 1 Second Typical Chip-Erase`Quick-Pulse Programming Algorithm- 10 s Typical Byte-Program- 2 Second Chip-Program` 100,000 Erase/Program Cycles` 12.0 V ±5% VPP` High-Performance Read-90 ns Maximum Access Time` CMOS Low Power Consumption- 10 mA Typical Active ...

Product Details

Description

Features:

` Flash Electrical Chip-Erase
- 1 Second Typical Chip-Erase
`Quick-Pulse Programming Algorithm
- 10 s Typical Byte-Program
- 2 Second Chip-Program
` 100,000 Erase/Program Cycles
` 12.0 V ±5% VPP
` High-Performance Read
-90 ns Maximum Access Time
` CMOS Low Power Consumption
- 10 mA Typical Active Current
- 50 A Typical Standby Current
- 0 Watts Data Retention Power
` Integrated Program/Erase Stop Timer
` Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface
` Noise Immunity Features
- ±10% VCC Tolerance
- Maximum Latch-Up Immunity through EPI Processing
` ETOX™ Nonvolatile Flash Technology
- EPROM-Compatible Process Base
- High-Volume Manufacturing Experience
` JEDEC-Standard Pinouts
- 32-Pin Plastic Dip
- 32-Lead PLCC
- 32-Lead TSOP
(See Packaging Spec., Order #231369)
` Extended Temperature Options

Application

`The 28F010 flash memory provides nonvolatility along with the capability to perform over 100,000 electrical chip-erasure/reprogram cycles. These features make the 28F010 an innovative alternative to disk, EEPROM, and battery-backed static RAM.

`Where periodic updates of code and data tables are required, the 28F010's reprogrammability and nonvolatility make it the obvious and ideal replacement for EPROM.

`Primary applications and operating systems stored in flash eliminate the slow disk-to-DRAM download process. This results in dramatic enhancement of performance and substantial reduction of power consumption-a consideration particularly important in portable equipment. Flash memory increases flexibility with electrical chip erasure and in-system update capability of operating systems and application code. With updatable code, system manufacturers can easily accommodate last-minute changes as revisions are made.

`In diskless workstations and terminals, network traffic reduces to a minimum and systems are instant-on. Reliability exceeds that of electromechanical media. Often in these environments, power interruptions force extended re-boot periods for all networked terminals. This mishap is no longer an issue if boot code, operating systems, communication protocols and primary applications are flash resident in each terminal.

`For embedded systems that rely on dynamic RAM/disk for main system memory or nonvolatile backup storage, the 28F010 flash memory offers a solid state alternative in a minimal form factor. The 28F010 provides higher performance, lower power consumption, instant-on capability, and allows an "eXecute in place" (XIP) memory hierarchy for code and data table reading. Additionally, the flash memory is more rugged and reliable in harsh environments where extreme temperatures and shock can cause disk-based systems to fail.

`The need for code updates pervades all phases of a system's life-from prototyping to system manufacture to after sale service. The electrical chip-erasure and reprogramming ability of the 28F010 allows in-circuit alterability; this eliminates unnecessary handling and less reliable socketed connections, while adding greater test, manufacture, and update flexibility.

`Material and labor costs associated with code changes increases at higher levels of system integration-the most costly being code updates after sale. Code "bugs," or the desire to augment system functionality, prompt after sale code updates. Field revisions to EPROM-based code requires the removal of EPROM components or entire boards. With the 28F010, code updates are implemented locally via an edge connector, or remotely over a communcation link.

`For systems currently using a high-density static RAM/battery configuration for data accumulation, flash memory's inherent nonvolatility eliminates the need for battery backup. The concern for battery failure no longer exists, an important consideration for portable equipment and medical instruments, both requiring continuous performance. In addition, flash memory offers a considerable cost advantage over static RAM.

`Flash memory's electrical chip erasure, byte programmability and complete nonvolatility fit well with data accumulation and recording needs.

`Electrical chip-erasure gives the designer a "blank slate" in which to log or record data. Data can be periodically off-loaded for analysis and the flash memory erased producing a new "blank slate. " A high degree of on-chip feature integration simplifies memory-to-processor interfacing. Figure 3 depicts two 28F010s tied to the 80C186 system bus. The 28F010's architecture minimizes interface circuitry needed for complete in-circuit updates of memory contents.

`The outstanding feature of the TSOP (Thin Small Outline Package) is the 1.2 mm thickness. TSOP is particularly suited for portable equipment and applications requiring large amounts of flash memory.

`With cost-effective in-system reprogramming, extended cycling capability, and true nonvolatility, the 28F010 offers advantages to the alternatives: EPROMs, EEPROMs, battery backed static RAM, or disk. EPROM-compatible read specifications, straightforward interfacing, and in-circuit alterability offers designers unlimited flexibility to meet the high standards of today's designs.

Pinout

Connection Diagram

Specifications

Operating Temperature
During Read............................0 °C to +70 °C(1)
During Erase/Program.............0 °C to +70 °C(1)
Operating Temperature
During Read..........................40 to +85 (2)
During Erase/Program...........40 to +85 (2)
Temperature Under Bias.......10 to +80 (1)
Temperature Under Bias.......50 to +95 (2)
Storage Temperature............... 65 to +125
Voltage on Any Pin with
Respect to Ground .................. 2.0 V to +7.0 V(3)
Voltage on Pin A9 with
Respect to Ground .............2.0 V to +13.5 V(3, 4)
V_PP Supply Voltage with
Respect to Ground
During Erase/Program........ 2.0 V to +14.0 V(3, 4)
V_CC Supply Voltage with
Respect to Ground .................. 2.0 V to +7.0 V(3)
Output Short Circuit Current................... 100 mA(5)

NOTES:
1. Operating Temperature is for commercial product as defined by this specification.
2. Operating Temperature is for extended temperature products as defined by this specification.
3. Minimum DC input voltage is 0.5 V. During transitions, inputs may undershoot to 2.0 V for periods less than 20 ns. Maximum DC voltage on output pins is V_CC + 0.5 V, which may overshoot to V_CC + 2.0 V for periods less than 20 ns.
4. Maximum DC voltage on A9 or V_PP may overshoot to +14.0 V for periods less than 20 ns.
5. Output shorted for no more than one second. No more than one output shorted at a time.
6. See AC Testing Input/Output Waveform (Figure 6) and AC Testing Load Circuit (Figure 7) for testing characteristics.

Description

Intel's 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write
random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar
EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; onboard
during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of eight bits. Intel's 28F010 is
offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC standards for byte-wide EPROMs.
Extended erase and program cycling capability is designed into Intel's ETOX™ (EPROM Tunnel Oxide)
process technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field
combine to extend reliable cycling beyond that of traditional EEPROMs. With the 12.0 V VPP supply, the
28F010 performs 100,000 erase and program cycles-well within the time limits of the quick-pulse
programming and quick-erase algorithms.

Intel's 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds,
low power consumption, and immunity to noise. Its 90 ns access time provides zero wait-state performance
for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 A translates into
power savings when the device is deselected. Finally, the highest degree of latch-up protection is achieved
through Intel's unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA on address and data pins, from 1 V to VCC + 1 V.

With Intel's ETOX process technology base, the 28F010 builds on years of EPROM experience to yield the highest levels of quality, reliability, and cost-effectiveness.

TE28F010-120

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